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TechnicalFeature 技术特写
于还存在一些其他未被加入模型的金
属，也可能是由于测量装置存在±0.8dB
18
的精度误差 。
由图7b的坐标系可知E面和H面分别
位于XZ及XY平面。辐射方向图如图8所
示，可以看到二者的图样都存在一些扭
曲，E面尤甚。
表2列举了本设计与其他案例的性
能比较，峰值增益虽基本相当或略低，
不过芯片尺寸是最小的。
总结
本文提出了一种非对称R-AMC设
计，用于增强圆形AoC的增益并减小
其尺寸。天线在60GHz时模拟峰值增益
为-0.4dBi。成品采用0.18μm CMOS技
2
术制造，总大小1.22mm ，60GHz时测
得实际峰值增益为-4.3dBi。考虑到探
针和AoC周围金属对性能的影响，通过
对成品进行重新建模，仿真结果与实际
情况的初始差异可以得到消除。在低于
58GHz的频段上，测量值与模拟值基本
达成一致。对于较高的频率，1.5dB量级
的差值可能是由于仿真中其他一些没有
考虑到的因素所导致的。辐射图的仿真
与测量结果吻合良好。■
26
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Microwave Journal China 微波杂志 Jul/Aug 2017